4
RF Device Data
Freescale Semiconductor
MRF7S21110HR3 MRF7S21110HSR3
Figure 1. MRF7S21110HR3(HSR3) Test Circuit Schematic
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
Z1
Z2
Z3
Z4
C1
C7
Z5
Z7
Z8
Z9
Z11
Z12
C11
+
C14
+
C12
C10
C9
C8
C6
C5
C4
C3
C2
+
R1
+
R2
Z6
++
C13
Z10
Z1 1.280″
x 0.084″
Microstrip
Z2 0.856″
x 0.084″
Microstrip
Z3 0.240″
x 0.280″
Microstrip
Z4 0.420″
x 0.880″
Microstrip
Z5 0.950″
x 0.0395″
Microstrip
Z6 0.526″
x 0.0940″
Microstrip
Z7 0.480″
x 1.050″
Microstrip
Z8 0.370″
x 0.201″
Microstrip
Z9 0.386″
x 0.084″
Microstrip
Z10 0.196″
x 0.242″
Microstrip
Z11 0.105″
x 0.084″
Microstrip
Z12 1.267″
x 0.084″
Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030″,
εr
=2.55
Table 5. MRF7S21110HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
15 pF, Chip Capacitor
ATC100B150JT500XT
ATC
C2
47
μF, 16 V Tantalum Capacitor
T491D476K016AT
Kemet
C3
8.2 pF, Chip Capacitor
ATC100B8R2CT500XT
ATC
C4, C13
2.2
μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C5
1
μF, 50 V Tantalum Capacitor
T491C105K050AT
Kemet
C6
5.1 pF Chip Capacitor
ATC100B5R1CT500XT
ATC
C7
16 pF Chip Capacitor
ATC100B160JT500XT
ATC
C8
6.8 pF Chip Capacitor
ATC100B6R8BT500XT
ATC
C9, C10
22
μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C11
0.1
μF Chip Capacitor
C1206C104K5RAC
Kemet
C12
100
μF, 50 V Electrolytic Capacitor
MCR63V477M13X26
Multicomp
C14
470
μF, 63 V Electrolytic Capacitor
MCR50V107M8X11
Multicomp
R1
1K?, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10
?, 1/3 W Chip Resistor
CRCW121010R0FKEA
Vishay
相关PDF资料
MRF7S21150HSR5 MOSFET RF N-CH 150W NI780S
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MRF7S21210HSR5 MOSFET RF N-CH 63W NI-780S
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相关代理商/技术参数
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MRF7S21150HR3_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S21150HR5 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21150HSR3 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21150HSR5 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21170HR3 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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